A high-uniformity, high-purity copper pillar ECP process with limited acid concentration
نویسندگان
چکیده
The requirements for wafer-level packaging (WLP) are becoming more and stringent both from a sustainability perspective process performance. For instance, there is demand continuous improvement within die uniformity (WID) operating in low acid environment copper pillar plating. Antagonistic these requests are; however, we must devise novel ECP techniques additive designs to meet such ambitious targets. additives consist of an accelerator, suppressor, leveler. systematic use Linear Sweep Voltammetry (LSV) aided the study electrochemical response screen determine Wagner number (Wa) current density region interest. In addition, rigorous Design Experiment (DOE) enabled us concentrations combining this new leveler suppressor with accelerator. Owing designing right controlled free concentration at 10% (100 g/L) while maintaining WID below 2.5% controlling within-feature (WIF) less than 1µm (~2.0%), using deposition rate approximately 2.0 µm/min, various wafer patterns aspect ratios layouts. Lastly, resulting film properties as crucial SIMS studies support deficient level inclusion total impurity 3.1 ppm, including C, O, N, S, Cl. Therefore, when studied solder cap, Kirkendall void performance was outstanding based on minimal voids post 10X reflow cycles high-temperature storage. shear stress test measuring bonding between its pad 18.4 gf/mil2.
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ژورنال
عنوان ژورنال: IMAPS symposia and conferences
سال: 2023
ISSN: ['2380-4505']
DOI: https://doi.org/10.4071/001c.74736